FEATURES

· High-Bandwidth Data Path (up to 500 MHz (1))

· 5-V-Tolerant I/Os With Device Powered Up or

Powered Down

· Low and Flat ON-State Resistance (ron)

Characteristics Over Operating Range

(ron = 4 W Typ)

· Rail-to-Rail Switching on Data I/O Ports

– 0- to 5-V Switching With 3.3-V VCC

– 0- to 3.3-V Switching With 2.5-V V CC

· Bidirectional Data Flow With Near-Zero

Propagation Delay

· Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 4 pF Typ)

· Fast Switching Frequency (fOE = 20 MHz Max)

· Data and Control Inputs Provide Undershoot

Clamp Diodes

· Low Power Consumption (ICC = 0.7 mA Typ)

· VCC Operating Range From 2.3 V to 3.6 V

· Data I/Os Support 0- to 5-V Signaling Levels

(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

· Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

· Ioff Supports Partial-Power-Down Mode

Operation

· Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

· ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

· Supports Both Digital and Analog

Applications: Differential Signal Interface,

Memory Interleaving, Bus Isolation,

Low-Distortion Signal Gating

DESCRIPTION/ORDERING INFORMATION

The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of

the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows

for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device

also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized

interface solution ideally suited for broadband communications, networking, and data-intensive computing

systems.

The SN74CB3Q3384A is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is

high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow

between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists

between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging

current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup

resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is

determined by the current-sinking/current-sourcing capability of the driver.