FEATURES

· High-Bandwidth Data Path (up to 500 MHz (1))

· Equivalent to IDTQS3VH251 Device

· 5-V Tolerant I/Os With Device Powered Up or

Powered Down

· Low and Flat ON-State Resistance (r on)

Characteristics Over Operating Range

(ron = 4 W Typ)

· Rail-to-Rail Switching on Data I/O Ports

– 0- to 5-V Switching With 3.3-V V CC

– 0- to 3.3-V Switching With 2.5-V VCC

· Bidirectional Data Flow With Near-Zero

Propagation Delay

· Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 3.5 pF Typ)

· Fast Switching Frequency

(fOE or fS = 20 MHz Max)

(1) For additional information regarding the performance

characteristics of the CB3Q family, refer to the TI application

report, CBT-C, CB3T, and CB3Q Signal-Switch Families,

literature number SCDA008.

· Data and Control Inputs Provide Undershoot

Clamp Diodes

· Low Power Consumption (ICC = 1 mA Typ)

· VCC Operating Range From 2.3 V to 3.6 V

· Data I/Os Support 0- to 5-V Signaling Levels

(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

· Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

· Ioff Supports Partial-Power-Down Mode

Operation

· Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

· ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model (A114-B,

Class II)

– 1000-V Charged-Device Model (C101)

· Supports Both Digital and Analog

Applications: PCI Interface, Differential Signal

Interface, Memory Interleaving, Bus Isolation,

Low-Distortion Signal Gating