BiCMOS Design Substantially Reduces ICCZ

Output Ports Have Equivalent 25-Ω

Resistors; No External Resistors Are

Required

Specifically Designed to Drive MOS DRAMs

3-State Outputs Drive Bus Lines or Buffer

Memory Address Registers

Flow-Through Architecture Optimizes

PCB Layout

Power-Up High-Impedance State

ESD Protection Exceeds 2000 V Per

MIL-STD-883C, Method 3015

Package Options Include Plastic

Small-Outline (DW) Packages, Ceramic

Chip Carriers (FK) and Flatpacks (W), and

Standard Plastic and Ceramic 300-mil DIPs

(JT, NT)

description

These 10-bit buffers and bus drivers are

specifically designed to drive the capacitive input

characteristics of MOS DRAMs. They provide

high-performance bus interface for wide data

paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with

active-low inputs so if either output-enable (OE1

or OE2) input is high, all ten outputs are in the

high-impedance state. The outputs are also in the

high-impedance state during power-up and

power-down conditions. The outputs remain in the

high-impedance state while the device is powered

down.

The SN54BCT2827C is characterized for operation

over the full military temperature range of

−55°C to 125°C. The SN74BCT2827C is

characterized for operation from 0°C to 70°C.