State-of-the-Art EPIC-IIBE BiCMOS Design

Significantly Reduces Power Dissipation

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 200 V

Using Machine Model (C = 200 pF, R = 0)

High-Impedance State During Power Up

and Power Down

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Package Options Include Plastic

Small-Outline (DW) Package, Ceramic Chip

Carriers (FK), and Plastic (NT) and

Ceramic (JT) DIPs

description

The ’ABT861 are 10-bit transceivers designed for

asynchronous communication between data

buses. The control-function implementation

allows for maximum flexibility in timing.

These devices allow noninverted data

transmission from the A bus to the B bus or from

the B bus to the A bus, depending on the logic

levels at the output-enable (OEAB and OEBA)

inputs.

When VCC is between 0 and 2.1 V, the device is

in the high-impedance state during power up or

power down. However, to ensure the

high-impedance state above 2.1 V, OE should be

tied to VCC through a pullup resistor; the minimum

value of the resistor is determined by the

current-sinking capability of the driver.

The SN54ABT861 is characterized for operation

over the full military temperature range of –55°C

to 125°C. The SN74ABT861 is characterized for

operation from –40°C to 85°C.