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SN74ABT540DBR.B中文资料

厂家型号

SN74ABT540DBR.B

文件大小

818.44Kbytes

页面数量

18

功能描述

OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

SN74ABT540DBR.B数据手册规格书PDF详情

State-of-the-Art EPIC-IIBE BiCMOS Design

Significantly Reduces Power Dissipation

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 200 V

Using Machine Model (C = 200 pF, R = 0)

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

Typical VOLP (Output Ground Bounce) < 1 V

at VCC = 5 V, TA = 25°C

High-Drive Outputs (–32-mA IOH, 64-mA IOL)

Package Options Include Plastic

Small-Outline (DW), Shrink Small-Outline

(DB), and Thin Shrink Small-Outline (PW)

Packages, Ceramic Chip Carriers (FK),

Plastic (N) and Ceramic (J) DIPs, and

Ceramic Flat (W) Package

description

The ’ABT540 octal buffers and line drivers are

ideal for driving bus lines or buffer memory

address registers. The devices feature inputs and

outputs on opposite sides of the package that

facilitate printed circuit board layout.

The 3-state control gate is a 2-input AND gate with

active-low inputs so that if either output-enable

(OE1 or OE2) input is high, all corresponding

outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT540 is characterized for operation over the full military temperature range of –55°C to 125°C. The

SN74ABT540 is characterized for operation from –40°C to 85°C.

更新时间:2025-10-17 15:14:00
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