1 Features

• Vendor item drawing available, VID V62/23632-01XE

• Total ionizing dose characterized at 30 krad (Si)

– Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)

• Single-event effects (SEE) characterized:

– Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg

– Single event transient (SET) characterized to 43 MeV-cm2 /mg

• Wide operating range of 1.2 V to 5.5 V

• Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC

– TTL compatible inputs:

• Up translation:

– 1.8-V – Inputs from 1.2 V

– 2.5-V – Inputs from 1.8 V

– 3.3-V – Inputs from 1.8 V, 2.5 V

– 5.0-V – Inputs from 2.5 V, 3.3 V

• Down translation:

– 1.2-V – Inputs from 1.8 V, 2.5 V, 3.3 V, 5.0 V

– 1.8-V – Inputs from 2.5 V, 3.3 V, 5.0 V

– 2.5-V – Inputs from 3.3 V, 5.0 V

– 3.3-V – Inputs from 5.0 V

• 5.5 V tolerant input pins

• Output drive up to 25 mA AT 5-V

• Latch-up performance exceeds 250 mA per JESD 17

• Space enhanced plastic (SEP)

– Controlled baseline

– Gold bondwire

– NiPdAu lead finish

– One assembly and test site

– One fabrication site

– Military (–55°C to 125°C) temperature range

– Extended product life cycle

– Product traceability

– Meets NASAs ASTM E595 outgassing specification