1 Features

• Qualified for automotive applications

– AEC-Q100 grade 1: –40 to 125°C TA

• Low EMI:

– Meets CISPR25 class 5 performance with no

additional components

• Integrated avalanche rated MOSFETs

– Designed and qualified for reliability for

dielectric withstand testing (Hi-Pot)

• TPSI2240-Q1 IAVA = 1mA for 60s pulses

• TPSI2240T-Q1 IAVA = 3mA for 60s pulses

– 1200V standoff voltage

– RON = 130Ω (TJ = 25°C)

– TON, TOFF < 700μs

– IOFF = 1.22μA at 1000V (TJ = 105°C)

• Low primary side supply current

– 5mA ON state current

– 3.5μA OFF state current (TJ = 25°C)

• Functional Safety Capable

– Documentation available to aid in ISO 26262

and IEC 61508 system design

• Robust isolation barrier:

– > 30 year projected lifetime at 1000VRMS /

1500VDC working voltage

– Reinforced Isolation rating, VISO, up to

3750VRMS

• SOIC 11-pin (DWQ) package with wide pins for

improved thermal performance

– Creepage and clearance ≥ 8mm (primarysecondary)

– Creepage and clearance ≥ 6mm (across switch

terminals)

• Safety-related certifications

– (Planned) DIN EN IEC 60747-17 (VDE

0884-17)

– (Planned) UL 1577 component recognition

program

2 Applications

• Solid state relay

• Hybrid, electric, and power train systems

• Battery Management Systems (BMS)

• Energy Storage Systems (ESS)

• Solar energy

• Onboard charger

• EV charging infrastructure

• See also the TI Reference Designs related to

these applications.

3 Description

The TPSI2240-Q1 is an isolated solid state relay

designed for high voltage automotive and industrial

applications. The TPSI2240-Q1 uses TI's high

reliability capacitive reinforced isolation technology in

combination with internal back-to-back MOSFETs to

form an integrated solution requiring no secondary

side power supply.

The primary side of the device is powered by only

5mA of input current and incorporates a fail-safe EN

pin preventing any possibility of back powering the

VDD supply. In most applications, the VDD pin of

the device should be connected to a system supply

between 5V – 20V and the EN pin of the device

should be driven by a GPIO output with logic HI

between 2.1V – 20V. In other applications, The VDD

and EN pins could be driven together directly from

the system supply or from a GPIO output. All control

configurations of the TPSI2240-Q1 do not require

additional external components such as a resistor

and/or low side switch that are typically required in

photo relay solutions.

The secondary side consists of back-to-back

MOSFETs with a standoff voltage of ±1.2kV from

S1 to S2. The TPSI2240-Q1 MOSFET's avalanche

robustness and thermally conscious package design,

allow it to robustly support system level dielectric

withstand testing (HiPot) and DC fast charger surge

currents of up to 1mA without requiring any external

components.