位置:P54SC1G125MDBVTSEP > P54SC1G125MDBVTSEP详情

P54SC1G125MDBVTSEP中文资料

厂家型号

P54SC1G125MDBVTSEP

文件大小

1132.44Kbytes

页面数量

29

功能描述

SN54SC1G125-SEP Radiation Tolerant, Single Bus Buffer Gate with 3-State Output

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

P54SC1G125MDBVTSEP数据手册规格书PDF详情

1 Features

• VID TBD-01XE

• Radiation - Total Ionizing Dose (TID):

– TID characterized up to 50 krad(Si)

– TID performance assurance up to 30 krad(Si)

– Radiation Lot Acceptance Testing (RLAT) for

every wafer lot up to 30 krad(Si)

• Radiation - Single-Event Effects (SEE):

– Single Event Latch-Up (SEL) immune up to 50

MeV-cm2/mg at 125°C

– Single Event Transient (SET) characterized up

to LET = 50 MeV-cm2/mg

• Wide operating range of 1.2V to 5.5V

• 5.5V tolerant input pins

• Supports standard pinouts

• Up to 150Mbps with 5V or 3.3V VCC

• Latch-up performance exceeds 100mA per JESD

78

• Space enhanced plastic:

– Supports Defense and Aerospace Applications

– Controlled baseline

– Au bondwire and NiPdAu lead finish

– Meets NASA ASTM E595 outgassing

specification

– One fabrication, assembly, and test site

– Extended product life cycle

– Product traceability

2 Applications

• Enable or disable a digital signal

• Controlling an indicator LED

3 Description

The SN54SC1G125-SEP is a single line driver with

a 3-state output. The output is disabled when the

output-enable (OE) input pin is at a logic high level.

When (OE) is at a logic low level, true data is passed

from the A input to the Y output.

更新时间:2025-10-6 14:00:00
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