1 Features

1• 4-Channel Multi-Rate Operation: Up to 28 Gbps

• Dissipation at a 3-V Supply: 90 mW per Channel

• Differential Transimpedance: 7.5 kΩ

• Bandwidth: 17.5 GHz

• Input-Referred Noise: 2 μArms

• Input Overload Current: 3.2 mAPP

• Programmable Output Voltage

• Adjustable Gain and Bandwidth

• Received Signal Strength Indicator (RSSI) for

Each Channel

• Isolation Between Channels (Die Only): 40 dB

• Single Supply: 2.8 V to 3.3 V

• Pad Control or 2-Wire Control

• On-Chip Filter Capacitors

• –40°C to +100°C Operation

• Die Size: 3250 μm × 1450 μm, 750-μm Channel

Pitch

2 Applications

• 100 Gigabit Ethernet Optical Receivers

• ITU OTL4.4

• CFP2, CFP4, and QSFP28 Modules with Internal

Retiming

3 Description

The ONET2804TLP device is a high-gain, limiting

transimpedance amplifier (TIA) for parallel optical

interconnects with data rates up to 28 Gbps. The

device is used in conjunction with a 750-μm pitch

photodiode array to convert an optical signal into a

differential output voltage. An internal circuit provides

the photodiode reverse bias voltage and senses the

average photocurrent supplied to each photodiode.

The device can be used with pin control or a two-wire

serial interface to allow control of the output

amplitude, gain, bandwidth, and input threshold.

The ONET2804TLP provides 17.5-GHz bandwidth, a

gain of 7.5 kΩ, an input-referred noise of 2 μArms, and

a received signal strength indicator (RSSI) for each

channel. 40-dB isolation between channels results in

low crosstalk penalty in the receiver.

The device requires a single 2.8-V to 3.3-V supply

and typically dissipates 90 mW per channel with a

differential output amplitude of 300 mVPP. The device

is characterized for operation from –40°C to +100°C

and is available in die form with a 750-μm channel

pitch.