1 Features

• GaN power-FET half bridge: 650V

• Low-side and high-side GaN FETs: 140mΩ

• Integrated gate drivers with low propagation delays: < 100ns

• Programmable turn-on slew rate control

• Current-sense emulation with high-bandwidth and high accuracy

• Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins

• Low-side (INL) and high-side (INH) gate-drive interlock

• High-side (INH) gate-drive signal level shifter

• Smart-switched bootstrap diode function

• High-side start up: < 8μs

• Low-side and high-side cycle-by-cycle overcurrent protection

• Overtemperature protection

• AUX idle quiescent current: 250μA

• AUX standby quiescent current: 50μA

• BST idle quiescent current: 70μA

• 6mm × 8mm QFN package with dual thermal pads