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LM5101MSLASHNOPB中文资料

厂家型号

LM5101MSLASHNOPB

文件大小

585.43Kbytes

页面数量

21

功能描述

LM5100 /LM5101 High Voltage High Side and Low Side Gate Driver

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

LM5101MSLASHNOPB数据手册规格书PDF详情

1FEATURES

2• Drives Both a High Side and Low Side N-

Channel MOSFET

• Independent High and Low Driver Logic Inputs

(TTL for LM5101 or CMOS for LM5100)

• Bootstrap Supply Voltage Range up to 118V

DC

• Fast Propagation Times (25 ns Typical)

• Drives 1000 pF Load with 15 ns Rise and Fall

Times

• Excellent Propagation Delay Matching (3 ns

Typical)

• Supply Rail Under-voltage Lockouts

• Low Power Consumption

• Pin Compatible with HIP2100/HIP2101

TYPICAL APPLICATIONS

• Current Fed Push-pull Converters

• Half and Full Bridge Power Converters

• Synchronous Buck Converters

• Two Switch Forward Power Converters

• Forward with Active Clamp Converters

PACKAGE

• SOIC-8

• WSON-10 (4 mm x 4 mm)

DESCRIPTION

The LM5100/LM5101 High Voltage Gate Drivers are

designed to drive both the high side and the low side

N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver

is capable of operating with supply voltages up to

100V. The outputs are independently controlled with

CMOS input thresholds (LM5100) or TTL input

thresholds (LM5101). An integrated high voltage

diode is provided to charge the high side gate drive

bootstrap capacitor. A robust level shifter operates at

high speed while consuming low power and providing

clean level transitions from the control logic to the

high side gate driver. Under-voltage lockout is

provided on both the low side and the high side

power rails. This device is available in the standard

SOIC-8 pin and the WSON-10 pin packages.

更新时间:2025-10-11 14:20:00
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