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LF353MSLASHNOPB.B中文资料

厂家型号

LF353MSLASHNOPB.B

文件大小

1094.86Kbytes

页面数量

19

功能描述

LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

LF353MSLASHNOPB.B数据手册规格书PDF详情

1FEATURES

2• Internally Trimmed Offset Voltage: 10 mV

• Low Input Bias Current: 50pA

• Low Input Noise Voltage: 25 nV/√Hz

• Low Input Noise Current: 0.01 pA/√Hz

• Wide Gain Bandwidth: 4 MHz

• High Slew Rate: 13 V/μs

• Low Supply Current: 3.6 mA

• High Input Impedance: 1012Ω

• Low Total Harmonic Distortion : ≤0.02%

• Low 1/f Noise Corner: 50 Hz

• Fast Settling Time to 0.01%: 2 μs

DESCRIPTION

These devices are low cost, high speed, dual JFET

input operational amplifiers with an internally trimmed

input offset voltage (BI-FET II technology). They

require low supply current yet maintain a large gain

bandwidth product and fast slew rate. In addition, well

matched high voltage JFET input devices provide very low input bias and offset currents. The LF353-N

is pin compatible with the standard LM1558 allowing

designers to immediately upgrade the overall

performance of existing LM1558 and LM358 designs.

These amplifiers may be used in applications such as

high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low

input offset voltage, low input bias current, high input

impedance, high slew rate and wide bandwidth. The

devices also exhibit low noise and offset voltage drift.

更新时间:2025-11-27 9:50:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NS/国半
2022+
450
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24+/25+
1875
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25+
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24+
3.9mm8
1594
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3400
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2015+
SOP
19889
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2016+
SOP8
9000
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