1 Features

• Radiation Performance

– Total Ionizing Dose (TID) Characterized

(ELDRS-Free) up to 50krad(Si)

– TID RLAT up to 30krad(Si)

– Single-Event Latch-up (SEL) Immune to LET up

to 43MeV-cm2/mg at 125℃

– Single-event functional interrupt (SEFI) and

single-event transient (SET) characterized LET

up to 43MeV-cm2/mg

• Space Enhanced Plastic (Space EP)

– Meets NASA ASTM E595 Outgassing Spec

– Military Temp Range (-55℃ to 125℃)

• 1-channel diode input

• Current transfer ratio (CTR) at IF = 5mA, VCE = 5V:

100% to 155%

• High collector-emitter voltage: VCE (max) = 30V

• Robust SiO2 isolation barrier

– Isolation rating: 3750VRMS

– Working voltage: 500VRMS, 707VPK

– Surge capability: up to 10kV

• Response time: 3μs (typical) at VCE = 10V, IC =

2mA, RL = 100Ω

• Small 4-pin package (DFG)

• Safety-related certifications:

– UL 1577 recognition

– DIN EN IEC 60747-17 (VDE 0884-17)

conformity per VDE

2 Applications

• Satellite electrical power systems (EPS)

• Communications Payload

• Radar Imaging Payload

3 Description

The ISOS510 radiation-tolerant device is a singlechannel,

current-driven, analog isolator with transistor

output. The device offers significant reliability and

performance advantages compared to other currentdriven

analog isolators, including high bandwidth,

low turn-off delay, low power consumption, wider

temperature ranges, flat current transfer ratio (CTR),

and tight process controls resulting in small part-topart

skew. These performance advantages stay stable

across radiation, temperature, and lifetime.

ISOS510 is offered in small a SOIC-4 package

with 2.54mm pin pitch, supporting a 3.75kVRMS

isolation rating . The high performance and reliability

of ISOS510 enables these devices to be used

in aerospace & defense applications such as

feedback loops in isolated DC/DC modules, satellite

propulsion power processing units, spacecraft battery

management systems, and more.