1 Features

• Dual channel, CMOS output functional isolators

• 50Mbps data rate

• AEC-Q100 qualified with the following results:

– Device temperature Grade 1: –40°C to +125°C

ambient operating temperature range

• Robust SiO2 isolation barrier with ±150kV/μs

typical CMTI

• Functional Isolation (8-D):

– 450VRMS, 637VDC working voltage

– 707VRMS, 1000VDC transient voltage (60s)

• Wide supply range: 1.71V to 1.89V and 2.25V to

5.5V

• 1.71V to 5.5V level translation

• Default output High (ISO652x-Q1) and Low

(ISO652xF-Q1) Options

• 1.8mA per channel typical at 1Mbps at 3.3V

• Low propagation delay: 11ns typical at 3.3V

• Robust electromagnetic compatibility (EMC)

– System-Level ESD, EFT, and surge immunity

– Ultra-low emissions

• Narrow-SOIC (8-D) package options

2 Applications

• Body electronics and Lighting

• Premium Audio

• Starter Generator

• Battery management system (BMS)

• Active Suspension

3 Description

The ISO652x-Q1 devices are high-performance,

dual-channel functional isolators designed for cost

sensitive, space constrained applications that require

isolation for non-safety applications. The isolation

barrier supports a working voltage of 450VRMS and

transient over voltages of 1000VDC.

The ISO652x-Q1 devices provide high

electromagnetic immunity and low emissions at

low power consumption, while isolating CMOS or

LVCMOS digital I/Os. Each isolation channel has a

logic input and output buffer separated by TI's double

capacitive silicon dioxide (SiO2) insulation barrier.

ISO6520-Q1 has two isolation channels with both

channels in the same direction. ISO6521-Q1 has two

isolation channels with one channel in each direction.

In the event of input power or signal loss, the default

output is high for devices without suffix F and low for

devices with suffix F. See Device Functional Modes

section for further details.

These devices help prevent ground loops and noise

currents between mixed voltage domain systems

on data buses, such as CAN and LIN, from

causing data corruption. Through chip design and

layout techniques, the electromagnetic compatibility

of the ISO652x-Q1 devices have been significantly

enhanced to ease system-level ESD and emissions

compliance.