1 Features

• G = 1/2 amplifier

• G = 2 amplifier

• Low offset voltage: 40 μV (maximum)

• Low offset voltage drift: ±2 μV/°C (maximum)

• Low noise: 18 nV/√Hz at 1 kHz

• Low gain error: ±0.03% (maximum)

• High common-mode rejection: 88 dB (minimum)

• Wide bandwidth: 2 MHz GBW

• Low quiescent current: 1.1 mA per amplifier

• High slew rate: 18 V/μs

• High capacitive load drive capability: 500 pF

• Wide supply range:

– Single supply: 4.5 V to 36 V

– Dual supply: ±2.25 V to ±18 V

• Specified temperature range:

–40°C to +125°C

• Packages: 8-Pin MSOP and SOIC, 10-pin VSON

2 Applications

• AC drive position feedback

• Servo drive position feedback

• Condition monitoring module (voltage, current)

• Power supply module

• Semiconductor test

3 Description

The INA592 device is a low-power, wide bandwidth

difference amplifier consisting of a precision

operational amplifier (op amp) and a precision

resistor network. Excellent tracking of resistors (TCR)

maintains gain accuracy and common-mode rejection

over temperature. Unique features such as low offset

40 μV (maximum), low offset drift (2 μV/°C maximum)

high slew rate (18 V/μs), and high capacitive load

drive of up to 500 pF make the INA592 a robust,

high-performance difference amplifier for high-voltage

industrial applications. The common-mode range of

the internal op amp extends to the negative supply,

enabling the device to operate in single-supply

applications. The device operates on single (4.5 V to

36 V) or dual supplies (±2.25 V to ±18 V).

The difference amplifier is the foundation of many

commonly used circuits. The INA592 provides this

circuit function without using an expensive precision

resistor network.