位置:DRV8363 > DRV8363详情
DRV8363中文资料
DRV8363数据手册规格书PDF详情
1 Features
• Three phase half-bridge gate driver
– Drives six N-channel MOSFETs (NMOS)
– 8 to 85V wide operating voltage range
– Bootstrap architecture for high-side gate driver
– Supports 50mA average gate switching current
enables driving 400nC MOSFETs at 20kHz
– Trickle charge pump to support 100% PWM
duty cycle and to generate overdrive supply
to drive external cut-off or reverse polarity
protection circuit
• Smart Gate Drive architecture
– 15-level configurable peak gate drive current up
to 1000 / 2000mA (source / sink)
– Closed-loop automatic deadtime insertion
based on gate-source voltage monitoring
– Configurable soft shutdown to minimize
inductive voltage spikes during overcurrent
shutdown
• Low-side Current Sense Amplifier
– 1mV low input offset across temperature
– 4-level adjustable gain
– Adjustable output bias to support unidirectional
or bidirectional sensing
• SPI-based detailed configuration and diagnostics
• DRVOFF pin to disable driver independently
• High voltage wake up pin (nSLEEP)
• Dedicated ASCIN pin to control motor braking
(active short circuit)
• 6x, 3x, 1x, and Independent PWM Modes
• Supports 3.3V and 5V Logic Inputs
• Integrated protection features
– Battery and power supply voltage monitors
– MOSFET VDS and Rsense over current monitors
– MOSFET VGS gate fault monitors
– Device thermal warning and shutdown
– Fault condition indicator pin
2 Applications
• Appliances, Cordless Garden and Power Tools,
Lawnmowers
• Brushless-DC (BLDC) Motor Modules and PMSM
• Fans, Pumps, and Servo Drives
• E-Bikes, E-Scooters, and E-Mobility
• Cordless Vacuum Cleaners
• Drones, Industrial & Logistics Robots, and RC
Toys
3 Description
The DRV8363 is an integrated smart gate driver
for 48V three-phase BLDC applications. The device
provides three half-bridge gate drivers, each capable
of driving high-side and low-side N-channel power
MOSFETs. The DRV8363 generates the correct
gate drive voltages using an external 12V supply
and an integrated bootstrap diode for the highside
MOSFETs. The Smart Gate Drive architecture
supports configurable peak gate drive current from
16mA up to 1A source and 2A sink. The DRV8363
can operate with a wide input range from 8V to 85V
at the motor connection. A trickle charge pump allows
for the gate drivers to support 100% PWM duty cycle
control and provides overdrive gate drive voltage of
external switches.
The DRV8363 provides low-side current sense
amplifiers to support resistor based low-side
current sensing. The low offset of the amplifiers
enables the system to obtain precise motor current
measurements.
A wide range of diagnostics and protection features
are integrated with the DRV8363 enables a robust
motor drive system design and helps eliminate the
need of external components. The highly configurable
device response allows the device to be integrated
seamlessly into a variety of system designs.
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DRV8363 芯片相关型号
- 1559910000
- 1840460000
- 2115
- 400UDP1L1BLKM2RE
- CRCW060310RFKEL
- CRCW060310RFNEA
- CRCW060310RFNEB
- CRCW060310RFNEC
- CRCW060310RFNED
- CRCW060310RFNEE
- CRCW2010562RJKEA
- DRV8363-Q1
- DRV8363-Q1_V01
- DRV8363QRGZRQ1
- DRV8363RGZR
- ISL3179E
- KA79XX
- KA79XXA
- MF-PSHT035KX
- MUR130
- PCA.0E.302.ULLC15
- VPEH102W476K1GV001E
- VPEH102W476K1GV001T
- VPEH102W476K1NT001E
- VPEH102W476K1NT001T
- VSVA-B-T32U-AZH-D1-F8
- VSVA-B-T32U-AZH-D2-F8
TI2相关芯片制造商
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