1 Features

• 40V Three Phase Half-Bridge Gate driver

– Drives N-Channel MOSFETs (NMOS)

– Gate Driver Supply (GVDD): 5-15V

– MOSFET supply (SHx) supports up to 40V

• Radiation Performance

– SEL, SEB, and SET resistant up to LET = 43

MeV-cm2 /mg

– SET and SEFI characterized up to LET = 43

MeV-cm2 /mg

– TID assured for every wafer lot up to 30

krad(Si)

– TID characterized up to 30 krad(Si)

– Cross conduction event is observed during SEE

and SEB. Refer to SEE report for more details.

• Space-enhanced plastic (space EP):

– Controlled Baseline

– One Assembly/Test Site

– One Fabrication site

– Extended Product Life Cycle

– Product Traceability

• Integrated Bootstrap Diodes

• Supports Inverting and Non-Inverting INLx inputs

• Bootstrap gate drive architecture

– 750mA source current

– 1.5- sink current

• Low leakage current on SHx pins (<55μA)

• Absolute maximum BSTx voltage up to 57.5V

• Supports negative transients up to -22V on SHx

• Fixed deadtime insertion of 200nS

• Supports 3.3V and 5V logic inputs with 20V Abs

max

• 4nS typical propagation delay matching

• Compact TSSOP package

• Efficient system design with Power Blocks

• Integrated protection features

– BST undervoltage lockout (BSTUV)

– GVDD undervoltage (GVDDUV)

2 Applications

Supports Defense, Aerospace and Medical

Applications

• Thruster Gimbal Mechanism

• Antenna Pointing Mechanism

• Reaction Wheel

• Propellant Control Valve

3 Description

DRV8351-SEP is a three phase half-bridge gate

driver, capable of driving high-side and low-side

N-channel power MOSFETs. The DRV8351-SEPD

generates the correct gate drive voltages using an

integrated bootstrap diode and external capacitor for

the high-side MOSFETs. GVDD is used to generate

gate drive voltage for the low-side MOSFETs. The

Gate Drive architecture supports peak up to 750mA

source and 1.5A sink currents.

The phase pins SHx are able to tolerate significant

negative voltage transients; while high side gate

driver supply BSTx and GHx can support higher

positive voltage transients (57.5V) abs max voltage

which improve the robustness of the system. Small

propagation delay and delay matching specifications

minimize the dead-time requirement which further

improves efficiency. Undervoltage protection is

provided for both low and high sides through GVDD

and BST undervoltage lockout.