1 Features

• Local and remote diode temperature sensor

– ±2.5°C accuracy, maximum

– 0.0625°C resolution

• Internal EEPROM for autonomous operation

– Four independent transfer functions storage

– Device configuration storage

– Open space for user storage

• Four analog outputs

– Four monotonic DACs: 1.22-mV resolution

– Automatically configured output ranges:

• Positive output voltage: 5.5 V, maximum

• Negative output voltage: –10 V, minimum

– High current drive capability:

• Source up to 100 mA

• Sink up to 20 mA

– High capacitive load tolerant: up to 15 μF

• Gate bias on and off control switches

– Two programmable off voltages

• Two auxiliary DACs: 1.22-mV resolution

– Fast switching time: 50 ns, typical

– Low resistance: 3 Ω, maximum

• Built-in sequencing control

• Internal 2.5-V reference

• SPI and I2C interfaces: 1.7-V to 3.6-V operation

– SPI: 4-wire Interface

– I2C: Eight selectable slave addresses

• Specified temperature range: –40°C to +125°C

• Operating temperature range –40°C to +150°C

2 Applications

• Radar

• Electronic warfare

• Communications payload

• Defense radio

• Active antenna system mMIMO (AAS)

• Outdoor backhaul unit

3 Description

The AFE10004 is a highly integrated, autonomous,

power-amplifier (PA) precision analog front end (AFE)

that includes four temperature compensation digitalto-

analog converters (DACs), integrated EEPROM,

and gate bias switches. The four DACs are

programmed by four, independent, user-defined,

temperature-to-voltage transfer functions stored in the

internal EEPROM, allowing any temperature effects to

be corrected without additional external circuitry. After

start up, the device operates without intervention from

a system controller to provide a complete system for

setting and compensating bias voltages in control

applications.

The AFE10004 has four gate bias outputs that are

switched on and off through dedicated control pins.

The gate bias switches are designed for fast

response. In combination with the device PA_ON pin,

this fast response enables correct power sequencing

and protection of depletion-mode transistors, such as

GaAs and GaN.

The function integration and wide operating

temperature range make the AFE10004 an excellent

choice as an all-in-one, autonomous bias control

circuit for the power amplifiers found in RF systems.

The flexible DAC output ranges and built-in

sequencing features let the device be used as a

biasing controller for a large variety of transistor

technologies, such as LDMOS, GaAs, and GaN.

Contact TI sales for the full data sheet.