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PUCC27301AQDDARQ1中文资料

厂家型号

PUCC27301AQDDARQ1

文件大小

1441.26Kbytes

页面数量

33

功能描述

UCC27301A-Q1 Automotive 120-V, 3.7-A/4.5-A Half-Bridge Driver with 8-V UVLO, Cross Conduction Protection, and Enable

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI1

PUCC27301AQDDARQ1数据手册规格书PDF详情

1 Features

• Qualified for automotive applications

• AEC-Q100 qualified with the following results:

– Temperature grade 1 (TJ = –40°C to 150°C)

– HBM ESD classification level 1B

– CDM ESD classification level C3

• Drives two N-channel MOSFETs in high-side and

low-side configuration with inputs interlocked

• Cross-conduction protection prevents short-circuit

by ensuring both outputs cannot be on

simultaneously

• Maximum boot voltage 120-V DC

• 3.7-A sink, 4.5-A source output currents

• Integrated bootstrap diode

• Input pins can tolerate –10 V to +20 V and are

independent of supply voltage range

• TTL compatible inputs

• 8-V to 17-V VDD operating range (20-V abs max)

with UVLO

• 7.2-ns rise and 5.5-ns fall time with 1000-pF load

• Enable/disable functionality with low current (7 μA)

consumption when disabled (DRC package only)

• Fast propagation delay times (20 ns typical)

• 4-ns delay matching

• Junction temperature specified from –40°C to

+150°C

2 Applications

• Automotive DC/DC converters

• Electric power steering (EPS)

• On-board charger (OBC)

• Integrated belt starter generator

• Automotive HVAC compressor modules

3 Description

The UCC27301A-Q1 automotive half-bridge driver is

a robust N-channel MOSFET driver with an absolute

maximum switch node (HS) voltage rating of 115 V. It

allows for two N-channel MOSFETs to be controlled in

half-bridge or synchronous buck configuration based

topologies. Its 3.7-A peak source and 4.5-A peak

sink current capability allows the UCC27301A-Q1 to

drive large power MOSFETs with minimized switching

losses during the transition through the Miller Plateau.

The switching node of the UCC27301A-Q1 (HS pin)

can handle negative transient voltage, which allows

the high-side channel to be protected from inherent

negative voltages caused by parasitic inductance and

stray capacitance.

The input structure can directly handle –10 VDC,

which increases robustness and also allows direct

interface to gate-drive transformers without using

rectification diodes. The LI and HI inputs are also

independent of supply voltage and have a 20-V

absolute maximum rating.

更新时间:2025-10-14 17:01:00
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