1 Features

• Gain bandwidth product: 900 MHz

• Internal switches for programmable gain

• High impedance FET inputs

• Input voltage noise: 2.2 nV/√Hz

• Slew rate: 350 V/μs

• Supply voltage range: 3.3 V to 5.25 V

• Quiescent current: 22 mA/channel

• Power down mode IQ: 75 μA

• Temperature range: -55 °C to 125 °C

• Supports defense, aerospace, and medical

applications

– Controlled baseline

– One assembly and test site

– One fabrication site

– Extended product life cycle

– Extended product-change notification

– Product traceability

2 Applications

• Switchable transimpedance amplifier

• Smart munitions

• Laser distance measurement

• Optical time domain reflectometry (OTDR)

• Silicon photomultiplier (SiPM) buffer

• Photomultiplier tube post amplifier

• High speed programmable gain amplifier

3 Description

The OPA3S2859-EP is a wideband, low-noise

programmable gain amplifier with CMOS inputs

for wideband transimpedance and voltage amplifier

applications. When the device is configured as a

transimpedence amplifier (TIA), the 0.9-GHz gain

bandwidth product (GBWP) enables high closedloop

bandwidths in low-capacitance photodiode (PD)

applications.

The three internal switched feedback paths along

with an optional parallel non-switched feedback path

allows for up to four selectable gain configurations.

The internal switches minimize parasitic contributions

to increase performance compared to systems that

use discrete external switches. Each switch is

optimized for feedback resistor values ranging from

100 kΩ for wide dynamic range

applications. The selected switch path is controlled for

both channels using a 2-wire parallel interface. For

each channel selected, the gain path can also be held

constant by exerting the latch pin, which subsequently

disables switch control for the selected channel and

prevents the channel from changing gain.