1 Features

• Integrated 1.7mΩ GaN FET and driver

• Interated high-side level shift and bootstrap

• Two LGM3100 can form a half-bridge

– No external level shifter needed

• 90V continuous, 100V pulsed voltage rating

• Package optimized for easy PCB layout

• 5V external bias power supply

• Supports 3.3V and 5V input logic levels

• High slew rate switching with low ringing

• Gate driver capable of up to 10MHz switching

• Internal bootstrap supply voltage clamping to

prevent GaN FET overdrive

• Supply rail undervoltage lockout protection

• Excellent propagation delay (29.5ns typical) and

matching (12ns typical)

• Low power consumption

• Exposed top QFN package for connection to

heatsink

2 Applications

• Buck, boost, and buck-boost converters

• LLC converters

• Solar inverters

• Telecom and server power

• Motor drives

• Power tools

• Class-D audio amplifiers

3 Description

The LMG3100 device is a 90V, 97A Gallium Nitride

(GaN) with integrated driver. The device consists of a

100V GaN FET driven by a high-frequency GaN FET

driver. The LMG3100 incorporates a high side level

shifter and bootstrap circuit, so that two LMG3100

devices can be used to form a half bridge without

needing an additional level shifter.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS and output

capacitance COSS. All the devices are mounted on

a completely bond-wire free package platform with

minimized package parasitic elements. The LMG3100

device is available in a 6.5mm × 4mm × 0.89mm leadfree

package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V

and 5V logic levels regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It

is an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor.