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JFE2140DSGR中文资料

厂家型号

JFE2140DSGR

文件大小

2514.78Kbytes

页面数量

33

功能描述

JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI1

JFE2140DSGR数据手册规格书PDF详情

1 Features

• Ultra-low noise:

– Voltage noise:

• 0.9 nV/√Hz at 1 kHz, IDS = 5 mA

• 1.1 nV/√Hz at 1 kHz, IDS = 2 mA

– Current noise: 1.6 fA/√Hz at 1 kHz

• Low VGS mismatch: 4 mV (max)

• Low gate current: 10 pA (max)

• Low input capacitance: 13 pF at VDS = 5 V

• High gate-to-drain and gate-to-source breakdown

voltage: –40 V

• High transconductance: 30 mS

• Packages: SOIC, 2-mm × 2-mm WSON

2 Applications

• Microphone inputs

• Hydrophones and marine equipment

• DJ controllers, mixers, and other DJ equipment

• Professional audio mixer or control surface

• Guitar amplifier and other music instrument amp

• Condition monitoring sensor

3 Description

The JFE2140 is a Burr-Brown™ Audio, matchedpair

discrete JFET built using Texas Instruments'

modern, high-performance, analog bipolar process.

The JFE2140 features performance not previously

available in older discrete JFET technologies. The

JFE2140 offers excellent noise performance across

all current ranges, where the quiescent current can

be set by the user from 50 μA to 20 mA. When

biased at 5 mA, the device yields 0.9 nV/√Hz of inputreferred

noise, giving ultra-low noise performance with

extremely high input impedance (> 1 TΩ). In addition,

the matching between JFETs is tested to ±4 mV,

providing low offset and high CMRR performance

for differential pair configurations. The JFE2140 also

features integrated diodes connected to separate

clamp nodes to provide protection without the addition

of high leakage, nonlinear external diodes.

The JFE2140 can withstand a high drain-to-source

voltage of 40‑V, as well as gate-to-source and gate-todrain

voltages down to –40 V. The temperature range

is specified from –40°C to +125°C.

更新时间:2025-12-16 14:12:00
供应商 型号 品牌 批号 封装 库存 备注 价格
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SMD
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