1 Features

• Total ionizing dose (TID) characterized to 100

krad(Si)

– Radiation hardness assurance availability of

100 krad(Si)

• Single-event effects (SEE) characterized

– Single-event latchup (SEL), single-event

burnout (SEB), and single-event gate rupture

(SEGR) immune to linear energy transfer (LET)

= 75 MeV-cm2/mg*

– Single-event functional interrupt (SEFI) and

single-event transient (SET) characterized to

LET = 75 MeV-cm2/mg*

• Integrated single channel eFuse

• Input voltage range: 4.5 V to 14 V

• Low on-resistance (RON) of 60-mΩ maximum at

25°C and VIN = 12 V

• 3.5-A maximum continuous switch current

• Low control input threshold aids in use of

1.2-V, 1.8-V, 2.5-V, and 3.3-V logic

• Configurable rise time (soft start)

• Reverse current protection (RCP)

• Overvoltage protection (OVP)

• Internal current limit (fast-trip)

• Thermal shutdown

• Ceramic and plastic package with thermal pad

• Available in military (–55°C to 125°C) temperature

range

*See TPS7H2211-SP SEE radiation report for test conditions

and full information

2 Applications

• Satellite electrical power system (EPS)

• Cold sparing power supplies (redundancy)

• Power supply sequencing

• Command and data handling

• Communications payload

• Radiation hardened and tolerant power tree

3 Description

The TPS7H2211 is a single channel eFuse (integrated

FET load switch with additional features) that provides

reverse current protection, overvoltage protection, and

a configurable rise time to minimize inrush current

(soft start). The device contains P-channel MOSFETs

that operate over an input voltage range of 4.5 V to 14

V and supports a maximum continuous current of 3.5

A.

The switch is controlled by an on and off input

(EN), which is capable of interfacing directly with

low-voltage control signals. Overvoltage protection

and soft start are programmable with few external

components through the OVP and SS pins. The

TPS7H2211 is available in a ceramic and plastic

package with an exposed thermal pad allowing

for improved thermal performance. A standard

microcircuit drawing (SMD) is available for the QML

5962R1822001VXC. A vendor item drawing (VID) is

available for the -SEP variant, V62/23609.