1 Features

• 5.7-kVRMS single-channel isolated gate driver

• AEC-Q100 Qualified with the following results:

– Device temperature grade 0: -40°C to +150°C

ambient operating temperature range

– Device HBM ESD classification level 3A

– Device CDM ESD classification level C6

• Functional Safety Quality-Managed

– Documentation available to aid functional safety

system design

• SiC MOSFETs and IGBTs up to 2121 Vpk

• 33-V maximum output drive voltage (VDD-VEE)

• ±10-A drive strength and split output

• 150-V/ns minimum CMTI

• 200-ns response time fast DESAT protection with

5-V threshold

• 4-A internal active Miller clamp

• 400-mA soft turn-off when fault happens

• Isolated analog sensor with PWM output for

– Temperature sensing with NTC, PTC, or

thermal diode

– High voltage DC-link or phase voltage

• Alarm FLT on overcurrent and reset from RST/EN

• Fast enable/disable response on RST/EN

• Reject <40-ns noise transient and pulse on input

pins

• 12-V VDD UVLO with power good on RDY

• Inputs/outputs with over- or under-shoot transient

voltage immunity up to 5 V

• 130-ns (maximum) propagation delay and 30-ns

(maximum) pulse/part skew

• SOIC-16 DW package with creepage and

clearance distance > 8mm

• Operating junction temperature –40°C to 150°C

2 Applications

• Traction inverter for EVs

• On-board charger and charging pile

• DC/DC converter for HEV/EVs

3 Description

The UCC21755-Q1 is a galvanic isolated single

channel gate driver designed for SiC MOSFETs

and IGBTs up to 2121-V DC operating voltage with

advanced protection features, best-in-class dynamic

performance, and robustness. UCC21755-Q1 has up

to ±10-A peak source and sink current.

The input side is isolated from the output side with

SiO2 capacitive isolation technology, supporting up to

1.5-kVRMS working voltage, 12.8-kVPK surge immunity

with longer than 40-years isolation barrier life, as well

as providing low part-to-part skew, and >150-V/ns

common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection

features, such as fast overcurrent and short circuit

detection, shunt current sensing support, fault

reporting, active Miller clamp, and input and output

side power supply UVLO to optimize SiC and IGBT

switching behavior and robustness. The isolated

analog to PWM sensor can be utilized for easier

temperature or voltage sensing, further increasing the

drivers' versatility and simplifying the system design

effort, size, and cost.