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PUCC5871QDWJRQ1中文资料

厂家型号

PUCC5871QDWJRQ1

文件大小

1677.84Kbytes

页面数量

32

功能描述

UCC5871-Q1 30-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI

PUCC5871QDWJRQ1数据手册规格书PDF详情

1 Features

• Split output driver provides 30-A peak source and

30-A peak sink currents

• Interlock and shoot-through protection with 150-

ns(max) propagation delay and programmable

minimum pulse rejection

• Primary and secondary side active short circuit

(ASC) support

• Configurable power transistor protections

– DESAT based short circuit protection

– Shunt resistor based overcurrent and short

circuit protection

– NTC based overtemperature protection

– Programmable soft turnoff (STO) and two-level

turnoff (2LTOFF) during power transistor faults

• Functional Safety-Compliant

– Developed for functional safety applications

– Documentation available to aid ISO 26262

system design up to ASIL D

• Integrated diagnostics:

– Built-in self test (BIST) for protection

comparators

– IN+ to transistor gate path integrity

– Power transistor threshold monitoring

– Internal clock monitoring

– Fault alarm (nFLT1) and warning (nFLT2)

outputs

• Integrated 4-A active Miller clamp or optional

external drive for Miller clamp transistor

• Advanced high voltage clamping control

• Internal and external supply undervoltage and

overvoltage protection

• Active output pulldown and default low outputs

with low supply or floating inputs

• Driver die temperature sensing and

overtemperature protection

• 100-kV/μs minimum common mode transient

immunity (CMTI) at VCM = 1000 V

• SPI based device reconfiguration, verification,

supervision, and diagnosis

• Integrated 10-bit ADC for power transistor

temperature, voltage, and current monitoring

2 Applications

• HEV and EV traction inverter

• HEV and EV power modules

3 Description

The UCC5871-Q1 device is an isolated, highly

configurable single-channel gate driver targeted to

drive high power SiC MOSFETs and IGBTs in EV/HEV

applications. Power transistor protections, such

as shunt-resistor–based overcurrent, NTC-based

overtemperature, and DESAT detection, include

selectable soft turn-off or two-level turn-off during

these faults. To further reduce the application size,

the UCC5871-Q1 integrates a 4-A active Miller clamp

during switching, and an active gate pulldown while

the driver is unpowered. An integrated 10-bit ADC

enables monitoring of up to six analog inputs and

the gate driver temperature for enhanced system

management. Diagnostics and detection functions

are integrated to simplify the system design. The

parameters and thresholds for these features are

configurable using the SPI interface, which allows the

device to be used with nearly any SiC MOSFET or

IGBT.

更新时间:2025-12-3 16:21:00
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