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PTPSI31P1QDVXRQ1中文资料
PTPSI31P1QDVXRQ1数据手册规格书PDF详情
1 Features
• Replaces large, high power pre-charge resistors
using a switched converter architecture
• Improved thermal performance compared to
passive pre-charge solutions
• Hysteretic current control for linear charging of
downstream capacitance
• Drives external power transistors such as Si, SiC
MOSFET, or IGBT
• Integrated isolated secondary supply for gate bias
• 17V gate drive, 1.5A and 2.5A peak source and
sink current
• AEC Q-100 qualified for automotive applications:
– Temperature grade 1: –40°C to +125°C, TA
• Functional Safety-Capable
– Documentation available to aid functional safety
system design
• Safety-related certifications
– Planned: 7070VPK reinforced isolation per DIN
EN IEC 60747-17 (VDE 0884-17)
– Planned: 5kVRMS isolation for 1 minute per UL
1577
2 Applications
• Battery management system
3 Description
The TPSI31P1-Q1 is designed to be used in
automotive pre-charge systems as an alternative
to traditional passive pre-charge architectures that
typically include costly electromechanical relays
(EMR), along with bulky, high power resistors.
The TPSI31P1-Q1, combined with external power
switches, power inductor and diode, forms an
active pre-charge solution. The inductor current is
continuously monitored and controlled in a hysteretic
mode of operation by the TPSI31P1-Q1 to linearly
charge the large capacitance of the downstream
system. The TPSI31P1-Q1 is an isolated switch driver
that generates its own secondary bias supply from
power received on its primary side, therefore no
isolated secondary supply is required. With a gate
drive voltage of 17V with 1.5A and 2.5A peak source
and sink current, a large availability of power switches
can be used including SiC FET and IGBT.
The TPSI31P1-Q1 integrates a communication backchannel
that transfers status information from the
secondary side to the primary side via open-drain
output, PGOOD (Power Good) and indicates when
the secondary power is valid.
The TPSI31P1-Q1 reinforced isolation is extremely
robust with much higher reliability, lower power
consumption, and increased temperature ranges than
those found in optocouplers. Replacing the EMR and
power resistor with a solid state solution can lead to
reduced cost and form factor, while providing higher
reliability.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
TI |
25+ |
B3QFN (RDL) |
6000 |
原厂原装,价格优势 |
|||
TI |
23+ |
B3QFN |
5000 |
全新原装正品现货 |
|||
TI |
25+ |
- |
18746 |
样件支持,可原厂排单订货! |
|||
TI |
25+ |
- |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
23+ |
NA |
719 |
专做原装正品,假一罚百! |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI |
16+ |
DIPMODULE |
10000 |
原装正品 |
|||
TI |
20+ |
8DIP |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
TI/德州仪器 |
21+ |
NA |
12820 |
只做原装,质量保证 |
PTPSI31P1QDVXRQ1 资料下载更多...
PTPSI31P1QDVXRQ1 芯片相关型号
- 638-044-630-261
- 638-044-630-262
- 638-044-630-263
- 638-044-630-266
- 638-044-630-267
- ATS-09F-172-C1-R0
- CT-1C-C/CE
- CT-1C-C/Q
- CT-1C-D
- CT-1C-D/CE
- CT-1C-D/Q
- CT-1C-F
- CT-1C-F/CE
- CT-1C-F/Q
- CT-1C-G
- CT-1C-G/CE
- CT-1C-G/Q
- CT-1C-H
- CT-1C-H/CE
- CT-1C-H/Q
- CT-1C-J
- IS-0640H2
- IS-0642H0
- IS-0642H2
- IS-0643H0
- IS-0643H2
- IS-064CH0
- IS-064CH2
- IS-064DH0
- IS-064DH2
Datasheet数据表PDF页码索引
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