1 Features

• AEC-Q100 qualified with the following results

– Device temperature grade 1:

–40°C to +125°C ambient operating

temperature range

– Device HBM ESD classification level 2

– Device CDM ESD classification level C4B

• 3-V to 65-V input range

• Reverse input protection down to –33 V

• Integrated VDS clamp for Input TVS less operation

for ISO7637 pulse suppression

• Low quiescent current 35 μA (max) in operation

• Low 3.3-μA (max) shutdown current (EN = Low)

• Ideal diode operation with 17-mV A to C forward

voltage drop regulation

• Drives external back-to-back N-Channel MOSFETs

• Integrated 30-mA boost regulator

• Fast response to reverse current blocking: 0.5 μs

• Active rectification up to 100 kHz

• Adjustable overvoltage protection

• Available in space saving 12-pin WSON package

• Pin-to-pin compatible with LM74720-Q1

2 Applications

• Automotive battery protection

– ADAS domain controller

– Camera, radar ECUs

– Premium audio amplifier

– Head-up display

3 Description

The LM74721-Q1 ideal diode controller drives and

controls external back to back N-Channel MOSFETs

to emulate an ideal diode rectifier with power path

ON and OFF control and overvoltage protection. The

wide input supply of 3 V to 65 V allows protection and

control of 12-V automotive battery powered ECUs.

The device can withstand and protect the loads from

negative supply voltages down to –33-V DC. An

integrated ideal diode controller (GATE) drives the

first MOSFET to replace a Schottky diode for reverse

input protection and output voltage holdup. Integrated

VDS clamp feature enables input TVS less system

designs for automotive ISO7637 pulse suppression.

A strong boost regulator with fast turn ON and OFF

comparators ensures robust and efficient MOSFET

switching performance during automotive testing such

as ISO16750 or LV124, where an ECU is subjected

to input short interruptions and AC superimpose input

signals up to 100-kHz frequency. Low Quiescent

Current 35 μA (maximum) in operation enables

always ON system designs. With a second MOSFET

in the power path, the device allows load disconnect

control using EN pin. Quiescent current reduces to

3.3 μA (maximum) with EN low. The device features

an adjustable overvoltage cutoff protection feature for

load dump protection.