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LM74912QRGERQ1中文资料

厂家型号

LM74912QRGERQ1

文件大小

3768.63Kbytes

页面数量

43

功能描述

LM74912-Q1 Automotive Ideal Diode Controller With Fault Output and Overvoltage, Undervoltage, and Short Circuit Protection

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI

LM74912QRGERQ1数据手册规格书PDF详情

1 Features

• AEC-Q100 qualified for automotive applications

– Device temperature grade 1:

–40°C to +125°C ambient operating

temperature range

• Functional Safety-Capable

– Documentation available to aid functional safety

system design

• 3-V to 65-V input range

• Reverse input protection down to –65 V

• Drives external back-to-back N-channel MOSFETs

in common drain configuration

• Ideal diode operation with 10.5-mV A to C forward

voltage drop regulation

• Low reverse detection threshold (–10.5 mV) with

fast response (0.5 μs)

• 20-mA peak gate (DGATE) turn-on current

• 2.6-A peak DGATE turn-off current

• Adjustable overvoltage and undervoltage

protection

• Output short circuit protection with MOSFET

latched off state

• Ultra low power mode with 2.5-μA shutdown

current (EN=Low)

• SLEEP mode with 6-μA current (EN=High,

SLEEP=Low)

• Meets automotive ISO7637 transient requirements

with a suitable transient voltage suppressor (TVS)

diode

• Available in 4 mm × 4 mm 24-pin VQFN package

2 Applications

• Automotive battery protection

– ADAS domain controller

– Infotainment and cluster

– Automotive external amplifier

• Active ORing for redundant power

3 Description

The LM74912-Q1 ideal diode controller drives and

controls external back to back N-channel MOSFETs

to emulate an ideal diode rectifier with power path

ON/OFF control with overvoltage, undervoltage and

output short circuit protection. The wide input supply

of 3 V to 65 V allows protection and control of

12-V and 24-V automotive battery powered ECUs.

The device can withstand and protect the loads

from negative supply voltages down to –65 V. An

integrated ideal diode controller (DGATE) drives

the first MOSFET to replace a Schottky diode for

reverse input protection and output voltage holdup.

With a second MOSFET in the power path the

device allows load disconnect (ON/OFF control) in

case of overcurrent and overvoltage events using

HGATE control. The device has integrated current

sense amplifier which provides external MOSFET

VDS sense based short circuit protection with an

adjustable current limit. When short circuit condition

is detected on the output then device latches off the

load disconnect MOSFET. The device features an

adjustable overvoltage cut-off protection feature. The

device features a SLEEP mode which enables ultra

low quiescent current consumption (6 μA) and at the

same time providing refresh current to the always

ON loads when vehicle is in the parking state. The

LM74912-Q1 has a maximum voltage rating of 65 V.

更新时间:2025-8-16 15:17:00
供应商 型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
25+
原厂封装
10280
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TI
16+
DIESALE
10000
原装正品
TI
20+
传感器
3000
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TI
21+
标准封装
3687
进口原装,订货渠道!
TI
24+
con
35960
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TI(德州仪器)
2024+
N/A
500000
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Texas Instruments
25+
模具
9350
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NSC
23+
SOP
50000
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NSC
/
SOP
35
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NSC
23+
SOP
12800
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