1 Features

• Radiation tolerant:

– Single-event latch-up (SEL) immune up to

LET = 43 MeV-cm2/mg at 125°C

– Single-event functional interrupt (SEFI)

characterized up to LET = 43 MeV-cm2/mg

– Total ionizing dose (TID) RLAT/RHA

characterized up to 20 krad(Si)

• Space-enhanced plastic (space EP):

– Meets ASTM E595 outgassing specification

– Vendor item drawing (VID) V62/22614

– Military temperature range: –55°C to +125°C

– One fabrication, assembly, and test site

– Gold bond wire, NiPdAu lead finish

– Wafer lot traceability

– Extended product life cycle

– Extended product change notification

• 12 monotonic, 12-bit DACs

– 0 V to 5 V output range

– DAC shutdown to user-defined level

• 16 input, 12-bit SAR ADC

– High sample rate: 500 kSPS

– 16 single-ended inputs or

2 differential and 12 single-ended inputs

– Programmable out-of-range alarms

• 8 GPIO pins

• Internal 2.5-V reference

• Two remote temperature sensors

• Internal temperature sensor

• Configurable SPI and I2C interface

– 2.7-V to 5.5-V operation

2 Applications

• Command and data handling (C&DH)

• Communications payload

• Radar imaging payload

• Optical imaging payload

• General analog monitoring and control

3 Description

The AFE11612-SEP is a highly integrated analog

monitor and control device designed for high-density,

general-purpose monitor and control systems. The

device includes 12 12-bit digital-to-analog converters

(DACs) and a 16-channel, 12-bit, analog-to-digital

converter (ADC). The device also incorporates

eight general-purpose inputs and outputs (GPIOs),

two remote temperature sensor channels, and a local

temperature sensor channel.

The device has an internal 2.5-V reference that

sets the DAC to an output voltage range of

0 V to 5 V. The device also supports operation

from an external reference. The device supports

communication through both SPI-compatible and I2Ccompatible

interfaces.

The device high level of integration significantly

reduces component count and simplifies closed-loop

system design, thus making the device a great choice

for high-density applications where radiation-tolerance

and board space are critical.