位置:SB051C020-1-W-AG > SB051C020-1-W-AG详情
SB051C020-1-W-AG中文资料
SB051C020-1-W-AG数据手册规格书PDF详情
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
SB051C020-1-W-AG产品属性
- 类型
描述
- 型号
SB051C020-1-W-AG
- 制造商
TRSYS
- 制造商全称
Transys Electronics
- 功能描述
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF.
更新时间:2025-8-2 15:00:00
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
3G SHIELDING SPECIALTIES LP |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ASTRODY |
2021+ |
DIP |
11000 |
十年专营原装现货,假一赔十 |
|||
ASTRODYNE |
24+ |
DIP24 |
5000 |
全新原装,一手货源,全场热卖! |
|||
ASTRODYNE |
23+ |
DIP24 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
SB051C020-1-W-AG 资料下载更多...
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