丝印代码：YE04；TXB0104 4-Bit Bidirectional Voltage-Level Translator With Automatic Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • VCC isolation feature: if either VCC input ss at GND, all outputs are in the high-impedance state • Output enable (OE) input circuit referenced to VCCA • Low power consumption, 5μA maximum ICC • I OFF supports

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 14TSSOP 集成电路（IC） 转换器，电平移位器

丝印代码：YE04；4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTOMATIC DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：971.51 Kbytes Page：25 Pages

丝印代码：YE04；4-Bit Bidirectional Voltage-level Translator With Automatic Direction Sensing and 15-kV ESD Protection

文件：1.28252 Mbytes Page：34 Pages

丝印代码：YE04；TXB0104 4-Bit Bidirectional Voltage-level Translator With Automatic Direction Sensing and 짹15-kV ESD Protection

文件：1.99 Mbytes Page：43 Pages

丝印代码：YE04；4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：135.13 Kbytes Page：12 Pages

丝印代码：YE04；4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTOMATIC DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：940.29 Kbytes Page：28 Pages

丝印代码：YE04；4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTOMATIC DIRECTION SENSING AND 15-kV ESD PROTECTION

文件：968.06 Kbytes Page：28 Pages

丝印代码：YE04；TXB0104 4-Bit Bidirectional Voltage-Level Translator With Automatic Direction Sensing and ±15kV ESD Protection

1 Features • 1.2V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • VCC isolation feature: if either VCC input ss at GND, all outputs are in the high-impedance state • Output enable (OE) input circuit referenced to VCCA • Low power consumption, 5μA maximum ICC • I OFF supports

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 14TSSOP 集成电路（IC） 转换器，电平移位器

丝印代码：YE04；TXB0104 4-Bit Bidirectional Voltage-level Translator With Automatic Direction Sensing and 짹15-kV ESD Protection

文件：1.99 Mbytes Page：43 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTOMATIC DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：971.51 Kbytes Page：25 Pages

4-Bit Bidirectional Voltage-level Translator With Automatic Direction Sensing and 15-kV ESD Protection

文件：1.28252 Mbytes Page：34 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTOMATIC DIRECTION SENSING AND 15-kV ESD PROTECTION

文件：968.06 Kbytes Page：28 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTOMATIC DIRECTION SENSING AND 짹15-kV ESD PROTECTION

文件：940.29 Kbytes Page：28 Pages

Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 Ωgain block. Typical applications include narrow and wide bandwidth IF and RF amplifiers in c

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan