GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package

Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. Features ● Low cost emitter ● Low forward voltage ● High radiant p

GaAs Infrared Emitting Diodes in 5 mm Package

DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 950 nm • High reliability • Angle of ha

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

文件：110.83 Kbytes Page：5 Pages

Infrared Emitting Diode, 950 nm, GaAs

文件：112.5 Kbytes Page：5 Pages

Infrared Emitting Diode, 950 nm, GaAs

文件：112.5 Kbytes Page：5 Pages

Infrared Emitting Diode

文件：111.47 Kbytes Page：5 Pages

Infrared Emitting Diode, 950 nm, GaAs

文件：118.87 Kbytes Page：5 Pages

封装/外壳：径向 包装：散装 描述：EMITTER IR 950NM 150MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

GaAs Infrared Emitting Diodes in 5 mm Package

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

文件：110.83 Kbytes Page：5 Pages

Infrared Emitting Diode, 950 nm, GaAs

文件：112.5 Kbytes Page：5 Pages

Infrared Emitting Diode

文件：111.47 Kbytes Page：5 Pages

封装/外壳：径向，5mm 直径（T 1 3/4） 包装：卷带（TR） 描述：EMITTER IR 940NM STD 光电器件 LED 发射器 - 红外，紫外，可见光

QUAD 2-INPUT NAND GATE

QUAD 2-INPUT NAND GATES

Quad 2-Input NAND Gates

文件：94.09 Kbytes Page：4 Pages

4700

文件：48.7 Kbytes Page：1 Pages

Simple and fast installation

文件：269.79 Kbytes Page：2 Pages

Single-Turn Precision Potentiometer

文件：766.2 Kbytes Page：4 Pages