High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface-mount • Package form: GW, RG

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: GW, RGW, yo

Extented Power IR Emitting Diode in SMD Package

DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: GW, RGW, yo

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Package type: surface-mount\nPackage form: GW, RGW, yoke, axial\nDimensions (L x W x H in mm): 2.5 x 2 x 2.7;

封装/外壳：轴向 包装：散装 描述：EMITTER IR 940NM 100MA AXIAL 光电器件 LED 发射器 - 红外，紫外，可见光

High Power Infrared Emitting Diode

文件：198.48 Kbytes Page：9 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

文件：196.83 Kbytes Page：9 Pages

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

文件：199.07 Kbytes Page：9 Pages

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

文件：353.14 Kbytes Page：10 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface-mount • Package form: GW, RG

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity.

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge,

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For thorough hole applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction