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型号 功能描述 生产厂家 企业 LOGO 操作
TSM4936DCS

Dual N-Channel 30-V (D-S) MOSFET

文件:1.0272 Mbytes Page:9 Pages

VBSEMI

微碧半导体

TSM4936DCS

30V, 5.9A, Dual N-Channel Power MOSFET

TSC

台湾半导体

Dual N-Channel 30-V (D-S) MOSFET

文件:1.0272 Mbytes Page:9 Pages

VBSEMI

微碧半导体

30V N-Channel MOSFET

文件:344.46 Kbytes Page:6 Pages

TSC

台湾半导体

ADVANCED VOLTAGE REGULATOR

DESCRIPTION The L4936E is a monolithic integrated dual voltage regulator with two very low dropout outputs and additional functions as power-on reset and in put voltage sense. It is designed for supplying the microcomputer controlled systems especially in automotive applications. ■ ENABLE AND SE

STMICROELECTRONICS

意法半导体

ADVANCED VOLTAGE REGULATOR

DESCRIPTION The L4936E is a monolithic integrated dual voltage regulator with two very low dropout outputs and additional functions as power-on reset and in put voltage sense. It is designed for supplying the microcomputer controlled systems especially in automotive applications. ■ ENABLE AND SE

STMICROELECTRONICS

意法半导体

DUAL MULTIFUNCTION VOLTAGE REGULATOR

DESCRIPTION TheL4936N/NHare monolithic integrateddual voltage regulators with two very low dropout outputs and additionalfunctionssuchas power-onresetand input voltage sense. They are designed for supplying microcomputer controlled systems specially in automotive applications. ■ STANDBY OUTPUT V

STMICROELECTRONICS

意法半导体

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere)

FEATURES ● High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● 1.0 ampere operation at TA=55 ¢J with no thermal runaway ● Fast switching for high efficiency ● Exceeds environ

PANJIT

強茂

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

VOLTAGE - 500 to 600 Volts CURRENT - 1.0 Amperes

TRSYS

Transys Electronics

TSM4936DCS产品属性

  • 类型

    描述

  • Type:

    N-Channel

  • Technology:

    Trench

  • Configuration:

    Dual

  • Status:

    Active

  • AEC-Q:

    No

  • VDS (V):

    30

  • VGS ±(V):

    20

  • ID Max. (A):

    5.9

  • TJ Max. (°C):

    150

  • RDS(ON) @ 10V Max. (mΩ):

    36

  • RDS(ON) @ 10V Typ. (mΩ):

    32

  • RDS(ON) @ 4.5V Max. (mΩ):

    53

  • RDS(ON) @ 4.5V Typ. (mΩ):

    42

  • Qg (nC) @ 10V:

    13

  • Qgd (nC):

    3.1

  • Qgs (nC):

    4.2

  • Ciss (pF):

    610

  • Coss (pF):

    100

  • Crss (pF):

    77

  • MSL:

    3

  • VGS(th) Max. (V):

    3

  • VGS(th) Min. (V):

    1

  • VGS(th) Typ. (V):

    1.5

更新时间:2026-8-2 17:55:00
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TAIWAN SEMICONDUCTOR
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