High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

DESCRIPTION TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off •

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Package type: leaded\n Package form: T-1¾\n Dimensions (in mm): Ø 5\n\n ;

封装/外壳：径向，5mm 直径（T 1 3/4） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 890NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

High Speed Infrared Emitting Diode in T-13/4 Package

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High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

文件：110.34 Kbytes Page：5 Pages

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

文件：111.92 Kbytes Page：5 Pages

High Speed Infrared Emitting Diode

文件：110.83 Kbytes Page：5 Pages

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

文件：109.17 Kbytes Page：5 Pages

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

DESCRIPTION TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off •

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

文件：110.34 Kbytes Page：5 Pages

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

文件：111.92 Kbytes Page：5 Pages

High Speed Infrared Emitting Diode

文件：110.83 Kbytes Page：5 Pages

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

文件：109.17 Kbytes Page：5 Pages

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS

文件：553.8 Kbytes Page：6 Pages

PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件：417.02 Kbytes Page：29 Pages

PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件：417.02 Kbytes Page：29 Pages