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TSHA550价格
参考价格：￥1.0842
型号：TSHA5500 品牌：Vishay 备注：这里有TSHA550多少钱，2026年最近7天走势，今日出价，今日竞价，TSHA550批发/采购报价，TSHA550行情走势销售排行榜，TSHA550报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TSHA550 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features | VISHAYVishay Siliconix 威世威世科技公司 |   | |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs DESCRIPTION The TSHA5500 is an infrared, 875 nm emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliab | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs Package type: leaded\n Package form: T-1¾\n Dimensions (in mm): Ø 5\n\n ; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs DESCRIPTION The TSHA5500 is an infrared, 875 nm emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliab | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs 文件：101.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs 文件：104.15 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs 文件：101.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs 文件：101.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 文件：114.51 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：径向 包装：散装 描述：EMITTER IR 875NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光 | ETC 知名厂家 | ETC | | |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 文件：114.51 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs 文件：101.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, 875 nm, GaAlAs 文件：104.15 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 文件：114.51 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 文件：114.51 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 文件：114.51 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Low Noise Transistors Low Noise Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
NPN general purpose transistors DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. | PHILIPS 飞利浦 | | ||
HIGH CURRENT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 5.0 Amperes) VOLTAGE 20 to 60 Volt CURRENT 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capac | PANJIT 強茂 | |
TSHA550产品属性
- 类型
描述
- 型号
TSHA550
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
TSHA550规格书下载地址
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DdatasheetPDF页码索引
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