High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

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High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

Security & Sound, #22-4c BC, Shielded, CMR

Product Description Security & Sound Cable, Riser-CMR, 4-22 AWG stranded bare copper conductors with polypropylene insulation, Beldfoil® shield and PVC jacket with ripcord

Security & Sound, #22-2c, BC, Shielded, CMR

Product Description Security & Sound Cable, Riser-CMR, 1-22 AWG stranded bare copper pair with polyolefin insulation and Beldfoil® shield, 2-22 AWG stranded bare copper conductors with insulation, overall PVC jacket with ripcord

2A Synchronous Step Down DC/DC Converter

„ FEATURES z 2A Output Current z Wide 4.5V to 27V Operating Input Range z Integrated 120mΩ Power MOSFET Switches z Output Adjustable from 0.925V to 24V z Up to 96% Efficiency z Programmable Soft-Start z Stable with Low ESR Ceramic Output Capacitors z Fixed 400KHz Frequency z Cycle-by-