GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package

Description The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 radiant power improvement. Features ●

Infrared Emitting Diode

Description The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 radiant power improvement. Features ●

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: p = 875 nm • High reliability • Angle of half intens

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

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封装/外壳：径向 包装：散装 描述：EMITTER 875NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Emitting Diode, 875 nm, GaAlAs

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Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: p = 875 nm • High reliability • Angle of half intens

Infrared Emitting Diode, 875 nm, GaAlAs

文件：117.75 Kbytes Page：5 Pages

High Output Xenon Flashlamp

Description The new FX-4400 Light Source from PerkinElmer Optoelectronics is a compact, high-output, long-life pulsed xenon flashlamp that offers exceptional arc stability, microsecond pulse durations and a high-intensity continuous line spectrum from the deep UV to the far IR. Features

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 10 mW (typ.) ● Fast response and high-speed modulation capability : fC = 20 MHz (typ.) ● TO-18 standard type package

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement: PXT4403. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification in industrial and consumer applications.

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT4403. FEATURES • High current (max. 600 mA) • Low voltage. APPLICATIONS • Switching and linear amplification in industrial and consumer applications.

Silicon NPN(PNP) epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● 2SB0709A(2SB709A) × 2 elements