位置：首页 > IC中文资料第7375页 > TSFF6410
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TSFF6410 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8 | VishayVishay Siliconix 威世威世科技公司 |   | |
TSFF6410 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8 | VishayVishay Siliconix 威世威世科技公司 | | |
TSFF6410 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero | VishayVishay Siliconix 威世威世科技公司 | | |
TSFF6410 | High Speed Infrared Emitting Diode 文件：106.66 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
TSFF6410 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 文件：111.58 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Speed Infrared Emitting Diode 文件：106.66 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
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TSFF6410产品属性
- 类型
描述
- 型号
TSFF6410
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL |
23+ |
DIP-16 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SGS |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
XKB CONNECTIVITY(中国星坤) |
21+ |
标准封装 |
500 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
|||
VISHAY/威世 |
24+ |
DIP-2 |
880000 |
明嘉莱只做原装正品现货 |
|||
ATMEL |
NEW |
DIP-16 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
25+ |
SOP-24 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
VISHAY |
25+23+ |
DIP-2 |
26755 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
DIP16P |
6868 |
原装现货,可开13%税票 |
||||
ATMEL/爱特梅尔 |
2403+ |
PLCC |
6489 |
原装现货热卖!十年芯路!坚持! |
TSFF6410规格书下载地址
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DdatasheetPDF页码索引
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