丝印代码：O13；High/low-side, bidirectional, zero-drift current sense amplifiers

Features • Wide common mode voltage: -0.3 to 26 V • Offset voltage: ±35 μV max. (TSC210) • 2.7 to 26 V supply voltage • Different gain available • – TSC210 (200 V/V) – TSC211 (500 V/V) – TSC212 (1000 V/V) – TSC213 (50 V/V) – TSC214 (100 V/V) – TSC215 (75 V/V) • Gain error: ±1 max. • Of

丝印代码：O13；High/low-side, bidirectional, zero-drift current sense amplifiers

Features • Wide common mode voltage: -0.3 to 26 V • Offset voltage: ±35 μV max. (TSC210) • 2.7 to 26 V supply voltage • Different gain available • – TSC210 (200 V/V) – TSC211 (500 V/V) – TSC212 (1000 V/V) – TSC213 (50 V/V) – TSC214 (100 V/V) – TSC215 (75 V/V) • Gain error: ±1% max.

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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