High / low side, bidirectional, zero-drift current sense amplifiers

Features • Wide common-mode voltage: -0.3 V to 26 V • Offset voltage: ±150 μV max. • Gain error: 1.5% max. • Offset drift: 0.5 μV/°C max. • Different gain available – TSC199A1 50 V/V – TSC199A2 100 V/V – TSC199A3 200 V/V • Quiescent current: 100 μA max. • SC70-6 and QFN10L (1.8 x 1.4

Low / High side bidirectional, zero-drift, current sense amplifiers

High / low side, bidirectional, zero-drift current sense amplifiers

Features • Wide common-mode voltage: -0.3 V to 26 V • Offset voltage: ±150 μV max. • Gain error: 1.5% max. • Offset drift: 0.5 μV/°C max. • Different gain available – TSC199A1 50 V/V – TSC199A2 100 V/V – TSC199A3 200 V/V • Quiescent current: 100 μA max. • SC70-6 and QFN10L (1.8 x 1.4

High / low side, bidirectional, zero-drift current sense amplifiers

Features • Wide common-mode voltage: -0.3 V to 26 V • Offset voltage: ±150 μV max. • Gain error: 1.5% max. • Offset drift: 0.5 μV/°C max. • Different gain available – TSC199A1 50 V/V – TSC199A2 100 V/V – TSC199A3 200 V/V • Quiescent current: 100 μA max. • SC70-6 and QFN10L (1.8 x 1.4

丝印代码：O1D；High / low side, bidirectional, zero-drift current sense amplifiers

Features • Wide common-mode voltage: -0.3 V to 26 V • Offset voltage: ±150 μV max. • Gain error: 1.5% max. • Offset drift: 0.5 μV/°C max. • Different gain available – TSC199A1 50 V/V – TSC199A2 100 V/V – TSC199A3 200 V/V • Quiescent current: 100 μA max. • SC70-6 and QFN10L (1.8 x 1.4

丝印代码：O1D；High / low side, bidirectional, zero-drift current sense amplifiers

Features • Wide common-mode voltage: -0.3 V to 26 V • Offset voltage: ±150 μV max. • Gain error: 1.5% max. • Offset drift: 0.5 μV/°C max. • Different gain available – TSC199A1 50 V/V – TSC199A2 100 V/V – TSC199A3 200 V/V • Quiescent current: 100 μA max. • SC70-6 and QFN10L (1.8 x 1.4

High / low side, bidirectional, zero-drift current sense amplifiers

Features • Wide common-mode voltage: -0.3 V to 26 V • Offset voltage: ±150 μV max. • Gain error: 1.5% max. • Offset drift: 0.5 μV/°C max. • Different gain available – TSC199A1 50 V/V – TSC199A2 100 V/V – TSC199A3 200 V/V • Quiescent current: 100 μA max. • SC70-6 and QFN10L (1.8 x 1.4

High / low side, bidirectional, zero-drift current sense amplifiers

Features • Wide common-mode voltage: -0.3 V to 26 V • Offset voltage: ±150 μV max. • Gain error: 1.5% max. • Offset drift: 0.5 μV/°C max. • Different gain available – TSC199A1 50 V/V – TSC199A2 100 V/V – TSC199A3 200 V/V • Quiescent current: 100 μA max. • SC70-6 and QFN10L (1.8 x 1.4

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series. FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V •

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. FEATURES • Small plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8µs • Continuous reverse voltage: max. 75 V • Repeti

Silicon epitaxial planar type

Silicon epitaxial planar type For high voltage switching circuit ■ Features • High breakdown voltage: VR = 200 V • Short reverse recovery time trr • Small package, allowing automatic mounting

Silicon NPN Transistor Low Noise, High Gain Amplifier

Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.

Precision Reference

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