位置：首页 > IC中文资料第2011页 > TSC136CZ
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 |   | ||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136 | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(8.0A,60-100V,70W) PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS | MOSPEC 统懋 | | ||
2.5V REFERENCE DIODE 文件：108.67 Kbytes Page：8 Pages | NSC 国半 | | ||
2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5 文件：110.36 Kbytes Page：8 Pages | NSC 国半 | | ||
2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5 文件：110.36 Kbytes Page：8 Pages | NSC 国半 | |
TSC136CZ产品属性
- 类型
描述
- 型号
TSC136CZ
- 功能描述
两极晶体管 - BJT High Vltg NPN Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
24+ |
TO-92 |
50000 |
全新原装,一手货源,全场热卖! |
|||
TD |
24+ |
NA |
60000 |
全新原装现货 |
|||
MIC |
23+ |
NA |
85 |
全新原装正品现货,支持订货 |
|||
CJ/长电 |
22+ |
13 |
20000 |
华拓芯城用芯经营 |
|||
原厂 |
专业光耦 |
dip8 |
65800 |
光耦原装优势主营型号-可开原型号增税票 |
|||
N/A |
23+ |
DIP-8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
TSC |
10+ |
DIP-8 |
7800 |
全新原装正品,现货销售 |
|||
TELEDYNE |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MIC |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
|||
TELTONE |
24+ |
DIP-8 |
2500 |
自己现货 |
TSC136CZ芯片相关品牌
TSC136CZ规格书下载地址
TSC136CZ参数引脚图相关
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