Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features • Rail-to-rail input and output • Low offset voltage: 1.5 mV maximum • Wide supply voltage range: 2.7 V to 36 V • Gain bandwidth product: 6 MHz • Slew rate of 3 V/μs • Low noise: 12 nV/√Hz • Integrated EMI filter • 2 kV HBM ESD tolerance • Extended temperature range: - 40 °C to +

High bandwidth (52 MHz), rail-to-rail output, 36 V op amp

Features • Low offset voltage: 3 mV max @ 25 °C • Low current consumption: 3.3 mA max / op @ 36 V • Wide supply voltage: 4.5 to 36 V • Gain bandwidth product: 52 MHz typ. @ 36 V • Unity gain stable • Rail-to-rail output • Output current: 40 mA typ. @ 36 V • Input common-mode voltage includ

Rail-to-rail inputs and outputs, 36 V, 6 MHz op-amps

TSB511、TSB512、TSB514均属于6 MHz带宽放大器系列，具有轨对轨输入和输出功能，能保证在2.7至36 V单电源以及±1.35至±18 V双电源下工作。\n\n 这些放大器的优势在于可提供大跨度的供电电压范围和较宽带宽。\n\n TSB511、TSB512和TSB514具有宽带宽、高转换速率、低噪声和轨到轨能力等特点，适用于滤波器、电源和电机控制、执行器驱动和电阻传感器等各种应用。 • 轨到轨输入和输出 \n• 宽电源电压范围:2.7 V 至36 V \n• 转换率3 V/µs \n• 集成EMI滤波器 \n• 更宽的温度范围：-40°C至+ 125°C \n• 适合汽车应用;

丝印代码：TSB512I；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features • Rail-to-rail input and output • Low offset voltage: 1.5 mV maximum • Wide supply voltage range: 2.7 V to 36 V • Gain bandwidth product: 6 MHz • Slew rate of 3 V/μs • Low noise: 12 nV/√Hz • Integrated EMI filter • 2 kV HBM ESD tolerance • Extended temperature range: - 40 °C to +

丝印代码：TSB512IY；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features • Rail-to-rail input and output • Low offset voltage: 1.5 mV maximum • Wide supply voltage range: 2.7 V to 36 V • Gain bandwidth product: 6 MHz • Slew rate of 3 V/μs • Low noise: 12 nV/√Hz • Integrated EMI filter • 2 kV HBM ESD tolerance • Extended temperature range: - 40 °C to +

丝印代码：K232；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features • Rail-to-rail input and output • Low offset voltage: 1.5 mV maximum • Wide supply voltage range: 2.7 V to 36 V • Gain bandwidth product: 6 MHz • Slew rate of 3 V/μs • Low noise: 12 nV/√Hz • Integrated EMI filter • 2 kV HBM ESD tolerance • Extended temperature range: - 40 °C to +

丝印代码：K233；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features • Rail-to-rail input and output • Low offset voltage: 1.5 mV maximum • Wide supply voltage range: 2.7 V to 36 V • Gain bandwidth product: 6 MHz • Slew rate of 3 V/μs • Low noise: 12 nV/√Hz • Integrated EMI filter • 2 kV HBM ESD tolerance • Extended temperature range: - 40 °C to +

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo