High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High rad

Ambient Light Sensor

DESCRIPTION TEPT4400 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1 package. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High

High Intensity LED in Ø 3 mm Tinted Diffused Package

DESCRIPTION This LED contains the double heterojunction (DH) GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current. It can be DC or pulse driven to achieve desired light output. The device is available in a 3 mm tinted diffused package. FEATURES