| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Specification of High Power IR Emitting Diode Chip DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H | VishayVishay Siliconix 威世威世科技公司 |   | ||
Specification of High Power IR Emitting Diode Chip DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and ass | VishayVishay Siliconix 威世威世科技公司 | | ||
Specification of High Power IR Emitting Diode Chip DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and ass | VishayVishay Siliconix 威世威世科技公司 | | ||
Specification of High Power IR Emitting Diode Chip DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H | VishayVishay Siliconix 威世威世科技公司 | | ||
Specification of High Power IR Emitting Diode Chip DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H | VishayVishay Siliconix 威世威世科技公司 | | ||
Specification of High Power IR Emitting Diode Chip DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and ass | VishayVishay Siliconix 威世威世科技公司 | | ||
Specification of High Power IR Emitting Diode Chip | VishayVishay Siliconix 威世威世科技公司 | | ||
Specification of High Power IR Emitting Diode Chip 文件：90.59 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PHOTO SENSOR 光电器件 LED 发射器 - 红外，紫外，可见光 | ETC 知名厂家 | ETC | | |
Specification of High Power IR Emitting Diode Chip 文件：90.59 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
DC Electronic Loads [EXCELIX] Numeric Displays Alphanumeric Displays Bar Graph Displays | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
The A8514 is a multi-output white LED driver for small-size LCD backlighting. Description The A8514 is a multi-output white LED driver for small-size LCD backlighting. It integrates a current-mode boost converter with internal power switch and four current sinks. The boost converter can drive up to 48 LEDs, 12 LEDs per string, at 80 mA. The LED sinks can be paralleled toge | ALLEGRO | | ||
The A8514 is a multi-output white LED driver for small-size LCD backlighting. Description The A8514 is a multi-output white LED driver for small-size LCD backlighting. It integrates a current-mode boost converter with internal power switch and four current sinks. The boost converter can drive up to 48 LEDs, 12 LEDs per string, at 80 mA. The LED sinks can be paralleled toge | ALLEGRO | | ||
DC Electronic Loads 文件：3.33535 Mbytes Page：6 Pages | BK B&K Precision Corporation | | ||
T1/E1 Interface Modules 文件：176.78 Kbytes Page：1 Pages | FILTRAN 费尔兰特 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2016+ |
SOP8 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
2021+ |
60000 |
原装现货，欢迎询价 |
||||
E2V |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
|||
ST |
23+ |
SOP |
6000 |
专业配单保证原装正品假一罚十 |
|||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ST |
25+23+ |
SOP8PB |
39706 |
绝对原装正品全新进口深圳现货 |
|||
ST |
25+ |
SOT23-5 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
SOT23-5 |
7512 |
绝对全新原装!现货!特价!请放心订购! |
|||
E2V |
QQ咨询 |
BGA |
71 |
全新原装 研究所指定供货商 |
|||
ST |
06+ |
?SOP-8 |
2000 |
自己公司全新库存绝对有货 |
TS8514规格书下载地址
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TS8514数据表相关新闻
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焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-8-28TS8121CXHF
联系人：陈先生 电话：18018738768（微信同号） QQ：1005525513 我司有一手货源，价优，可以长期提供大量，优质的货源，专业的渠道，物美价廉是公司与客户之间共同的理念 由于公司型号众多，无法一一上传，如在网站找不到您要的产品，请联系业务员，本司可提供电子元器件配单服务 我司部分现货库存如下： H16101MH-R
2020-4-14TS8121CLF
联系人：陈先生 电话：18018738768（微信同号） QQ：1005525513 我司有一手货源，价优，可以长期提供大量，优质的货源，专业的渠道，物美价廉是公司与客户之间共同的理念 由于公司型号众多，无法一一上传，如在网站找不到您要的产品，请联系业务员，本司可提供电子元器件配单服务 我司部分现货库存如下： GS2402SI G
2020-4-14TS883IST轨至轨0.9V毫微功耗比较器
STMicroelectronics 的比较器适用于各种便携式应用
2019-12-13TS821-1.225V微功耗电压基准
特点 1.225V典型输出电压超低操作电流：40mA 典型。高精度@ 25 +/ -2％（标准版） +/ -1％（A级） +/ -0.5％（B级）使用高STABILITYWHEN 容性负载宽温度范围：-40至+85岛ç T092与采用SOT23 -3包 描述 TheTS821是micropowerintegrated电路是一种高稳定，两个码头，带隙基准 在整个工业提供一个稳定的输出电压温度范围（-40℃至+85℃）。该最小工作电流
2013-3-13
DdatasheetPDF页码索引
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