型号 功能描述 生产厂家 企业 LOGO 操作
TS10P03G

Single Phase 10.0 Amps. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini

TSC

台湾半导体

TS10P03G

Single Phase 10.0 Amps. Glass Passivated Bridge Rectifiers

文件:226.44 Kbytes Page:2 Pages

TSC

台湾半导体

TS10P03G

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers

文件:138.11 Kbytes Page:2 Pages

TSC

台湾半导体

TS10P03G

Glass Passivated Bridge Rectifiers

文件:244.16 Kbytes Page:4 Pages

TSC

台湾半导体

TS10P03G

封装/外壳:4-SIP,TS-6P 包装:卷带(TR) 描述:DIODE BRIDGE 10A 200V TS-6P 分立半导体产品 二极管 - 桥式整流器

ETC

知名厂家

TS10P03G

10A, 200V, Standard Bridge Rectifier

TSC

台湾半导体

10A, 50V - 1000V Glass Passivated Bridge Rectifier

FEATURES ● Glass passivated junction ● Ideal for printed circuit board ● Typical IR less than 0.1μA ● High surge current capability ● UL Recognized File # E-326243 ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC APPLICATIONS ● Switching mode power supply (SMPS

TSC

台湾半导体

封装/外壳:4-SIP,TS-6P 包装:管件 描述:BRIDGE RECT 1P 200V 10A TS-6P 分立半导体产品 二极管 - 桥式整流器

ETC

知名厂家

10A, 200V, Standard Bridge Rectifier

TSC

台湾半导体

P-Channel Enhancement Mode Power MOSFET

Description The G10P03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

Intersil

P-Channel 30-V (D-S) MOSFET

文件:1.90259 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Channel Power MOSFET

文件:911.63 Kbytes Page:5 Pages

MCC

TS10P03G产品属性

  • 类型

    描述

  • 型号

    TS10P03G

  • 功能描述

    桥式整流器 10 Amp 200 Volt 200 Amp IFSM

  • RoHS

  • 制造商

    Vishay

  • 产品

    Single Phase Bridge

  • 峰值反向电压

    1000 V 最大 RMS

  • 正向连续电流

    4.5 A

  • 最大浪涌电流

    450 A

  • 正向电压下降

    1 V

  • 最大反向漏泄电流

    10 uA

  • 最大工作温度

    + 150 C

  • 长度

    30.3 mm

  • 宽度

    4.1 mm

  • 高度

    20.3 mm

  • 安装风格

    Through Hole

  • 封装/箱体

    SIP-4

  • 封装

    Tube

更新时间:2025-10-11 16:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Taiwan Semiconductor Corporati
25+
4-SIP TS-6P
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
TSC America Inc.
22+
9000
原厂渠道,现货配单
台产
23+
扁桥
80000
主营桥堆系列,真实库存
TAIWAN
25+
TS-6P
3675
就找我吧!--邀您体验愉快问购元件!

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