SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.27 V (typ.) (3) Low total capacitive charge: Qc = 162 nC (typ.) (4) Low reverse current: IR = 2.8 μA (ty

SiC Schottky barrier diode

Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 30 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 30 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 30 A • Easy to Parallel Operation Typical Applications • Solar • Energy Storage • Industrial Motor Control

Low Forward Voltage Trench-based Schottky Rectifier

文件：60.8 Kbytes Page：5 Pages

Low Forward Voltage Trench-based Schottky Rectifier

文件：60.8 Kbytes Page：5 Pages