High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Features ■ High voltage capability ■ Low

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

Integrated Circuit 2−Channel Audio Preamp