NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV8100 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting

NPN SILICON RF POWER TRANSISTOR

470-860 MHz, 150 W, 28 V RF Power Transistor

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting

NPN SILICON RF POWER TRANSISTOR

Vertical Driver LSI for Video Camera CCD Area Image Sensor

Overview The MN3111H is a vertical driver LSI for a two-dimensional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Z

ULTRAFAST RECTIFIER 8.0 AMPERES 1000 VOLTS

SWITCHMODE™ Ultrafast E Series Power Rectifier Plastic TO–220 Package Features mesa epitaxial construction with glass passivation. Ideally suited high frequency switching power supplies; free wheeling diodes; polarity protection diodes; and inverters. • 20 mjoules Avalanche Energy

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere)

VOLTAGE 20 to 150 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MILS-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high

SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS

DESCRIPTION µPC8100GR is a silicon monolithic integrated circuit designed as up/down converters for 800 MHz to 900 MHz mobile communications, mainly CT2. This IC consists of upconverter and downconverter, which are packaged in 20 pin SSOP. Quadrature modulator IC (µPC8101GR) is also available as

SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS

DESCRIPTION µPC8100GR is a silicon monolithic integrated circuit designed as up/down converters for 800 MHz to 900 MHz mobile communications, mainly CT2. This IC consists of upconverter and downconverter, which are packaged in 20 pin SSOP. Quadrature modulator IC (µPC8101GR) is also available as