SILICON N-CHANNEL RF POWER MOSFET

DESCRIPTION: The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. FEATURES: • PG = 12 dB min. at 0.5 W/ 860 MHz • Common Emitter • Omnigold™ Metallization System

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

UHF LINEAR POWER TRANSISTOR

SILICON N-CHANNEL RF POWER MOSFET

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV596A is designed for MATV amplifiers up to 860 MHz and 500 mW band V TV transposer stages. FEATURES: • Difused emiter ballast resistors • PG = 12 dB at 0.5 W/ 860 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR PARTMARKING DETAIL - P96

Silicon Diode, Dual, Common Anode, High Speed

Description: The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits.

CAPACITOR MICROPHONE APPLICATIONS

CAPACITOR MICROPHONE APPLICATIONS FEATURES * Especially Suited for use in Audio, Telephone Capacitor Microphones * Excellent Voltage characteristic * Excellent Transient Characteristic